Deflection analysis of epitaxially deposited polysilicon encapsulation for MEMS devices

Azrul Azlan Hamzah, Burhanuddin Yeop Majlis, Ibrahim Ahmad

Research output: Chapter in Book/Report/Conference proceedingConference contribution

15 Citations (Scopus)

Abstract

Numerical and simulation studies are done to determine deflection behavior of epitaxially deposited polysilicon encapsulation. Polysilicon encapsulation, which is used as physical protection for moving parts of MEMS devices, is applied with external pressure to replicate packaging processes. Polysilicon encapsulations of thickness 10, 20, 30, and 40 micron with seal oxide of thickness 2, 4, 6, 8, and 10 micron are analyzed. Ritz's and energy methods are used to numerically approximate surface deflection of polysilicon encapsulation when perpendicularly loaded with a uniform pressure varying from 10 to 100 atm. Simulation was done using CoventorWare ver.2001.3 software. It is observed that numerical analysis values approximate theoretical values for small deflection (W<t). Thus, numerical analysis could be use to predict deflection behavior of encapsulation in that region.

Original languageEnglish
Title of host publication2004 IEEE International Conference on Semiconductor Electronics, ICSE 2004
Pages611-614
Number of pages4
Publication statusPublished - 01 Dec 2004
Event2004 IEEE International Conference on Semiconductor Electronics, ICSE 2004 - Kuala Lumpur, Malaysia
Duration: 04 Dec 200409 Dec 2004

Publication series

NameProceedings ICSE 2004 - 2004 IEEE International Conference on Semiconductor Electronics

Other

Other2004 IEEE International Conference on Semiconductor Electronics, ICSE 2004
CountryMalaysia
CityKuala Lumpur
Period04/12/0409/12/04

Fingerprint

Encapsulation
Polysilicon
MEMS
Numerical analysis
Seals
Packaging
Oxides

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Cite this

Hamzah, A. A., Majlis, B. Y., & Ahmad, I. (2004). Deflection analysis of epitaxially deposited polysilicon encapsulation for MEMS devices. In 2004 IEEE International Conference on Semiconductor Electronics, ICSE 2004 (pp. 611-614). [1620960] (Proceedings ICSE 2004 - 2004 IEEE International Conference on Semiconductor Electronics).
Hamzah, Azrul Azlan ; Majlis, Burhanuddin Yeop ; Ahmad, Ibrahim. / Deflection analysis of epitaxially deposited polysilicon encapsulation for MEMS devices. 2004 IEEE International Conference on Semiconductor Electronics, ICSE 2004. 2004. pp. 611-614 (Proceedings ICSE 2004 - 2004 IEEE International Conference on Semiconductor Electronics).
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Hamzah, AA, Majlis, BY & Ahmad, I 2004, Deflection analysis of epitaxially deposited polysilicon encapsulation for MEMS devices. in 2004 IEEE International Conference on Semiconductor Electronics, ICSE 2004., 1620960, Proceedings ICSE 2004 - 2004 IEEE International Conference on Semiconductor Electronics, pp. 611-614, 2004 IEEE International Conference on Semiconductor Electronics, ICSE 2004, Kuala Lumpur, Malaysia, 04/12/04.

Deflection analysis of epitaxially deposited polysilicon encapsulation for MEMS devices. / Hamzah, Azrul Azlan; Majlis, Burhanuddin Yeop; Ahmad, Ibrahim.

2004 IEEE International Conference on Semiconductor Electronics, ICSE 2004. 2004. p. 611-614 1620960 (Proceedings ICSE 2004 - 2004 IEEE International Conference on Semiconductor Electronics).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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AB - Numerical and simulation studies are done to determine deflection behavior of epitaxially deposited polysilicon encapsulation. Polysilicon encapsulation, which is used as physical protection for moving parts of MEMS devices, is applied with external pressure to replicate packaging processes. Polysilicon encapsulations of thickness 10, 20, 30, and 40 micron with seal oxide of thickness 2, 4, 6, 8, and 10 micron are analyzed. Ritz's and energy methods are used to numerically approximate surface deflection of polysilicon encapsulation when perpendicularly loaded with a uniform pressure varying from 10 to 100 atm. Simulation was done using CoventorWare ver.2001.3 software. It is observed that numerical analysis values approximate theoretical values for small deflection (W

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Hamzah AA, Majlis BY, Ahmad I. Deflection analysis of epitaxially deposited polysilicon encapsulation for MEMS devices. In 2004 IEEE International Conference on Semiconductor Electronics, ICSE 2004. 2004. p. 611-614. 1620960. (Proceedings ICSE 2004 - 2004 IEEE International Conference on Semiconductor Electronics).