Characterization of fabrication process noises for 32nm NMOS devices

Husam Ahmed Elgomati, Burhanuddin Yeop Majlis, Ibrahim Ahmad, Taib Ziad

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This paper describes the effect of fabrication process noises to Sub-nanometer devices, which in this case a 32nm NMOS transistor. This experiment a part of a full Taguchi Method analysis to obtain an optimum fabrication recipe for the said transistor. The two noises introduced in the fabrication is ±1°C variation in sacrificial oxide layer growth by diffusion temperature and also silicide compress annealing temperature. In this project, a working 32 NMOS transistor fabrication is used. By increasing the sacrificial oxide layer diffusion temperature from 900°C to 901°C, the reference 32nm NMOS transistor threshold voltage (VTH) jumps from 0.1181V to 0.1394V, while leakage current drops from 0.111mA/um to 0.109 mA/um. By decreasing the silicide compress temperature from 910°C to 909°C, threshold voltage increase slightly from 0.118053V to 0.118068V, This shows a very different in magnitude of effect from same degree of noise introduce to the fabrication process.

Original languageEnglish
Title of host publicationICSE 2010 - Proceedings IEEE International Conference on Semiconductor Electronics
Pages252-255
Number of pages4
DOIs
Publication statusPublished - 11 Oct 2010
Event2010 IEEE International Conference on Semiconductor Electronics, ICSE 2010 - Melaka, Malaysia
Duration: 28 Jun 201030 Jun 2010

Other

Other2010 IEEE International Conference on Semiconductor Electronics, ICSE 2010
CountryMalaysia
CityMelaka
Period28/06/1030/06/10

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All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Elgomati, H. A., Majlis, B. Y., Ahmad, I., & Ziad, T. (2010). Characterization of fabrication process noises for 32nm NMOS devices. In ICSE 2010 - Proceedings IEEE International Conference on Semiconductor Electronics (pp. 252-255). [5549581] https://doi.org/10.1109/SMELEC.2010.5549581