Avalanche multiplication and excess noise in InAs electron avalanche photodiodes at 77 K

Andrew Robert Julian Marshall, Peter Vines, Pin Jern Ker, John P.R. David, Chee Hing Tan

Research output: Contribution to journalArticle

30 Citations (Scopus)

Abstract

The findings of a study of impact ionization, avalanche multiplication and excess noise in InAs avalanche photodiodes at 77 K are reported. It is shown that hole impact ionization is negligible in practical devices which continue to operate as electron avalanche photodiodes, as they do at room temperature. A new electron ionization coefficient capable of modeling multiplication at 77 K is presented and it is shown that significant multiplication can be achieved in practical devices without excessive tunneling currents. The characteristic changes observed between room temperature and 77 K are discussed. This paper helps to demonstrate the potential for practical InAs electron avalanche photodiodes, operating cooled.

Original languageEnglish
Article number5764939
Pages (from-to)858-864
Number of pages7
JournalIEEE Journal of Quantum Electronics
Volume47
Issue number6
DOIs
Publication statusPublished - 19 May 2011

Fingerprint

electron avalanche
Avalanche photodiodes
multiplication
avalanches
photodiodes
Impact ionization
ionization
Electrons
ionization coefficients
room temperature
Ionization
Temperature

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

Marshall, Andrew Robert Julian ; Vines, Peter ; Ker, Pin Jern ; David, John P.R. ; Tan, Chee Hing. / Avalanche multiplication and excess noise in InAs electron avalanche photodiodes at 77 K. In: IEEE Journal of Quantum Electronics. 2011 ; Vol. 47, No. 6. pp. 858-864.
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Avalanche multiplication and excess noise in InAs electron avalanche photodiodes at 77 K. / Marshall, Andrew Robert Julian; Vines, Peter; Ker, Pin Jern; David, John P.R.; Tan, Chee Hing.

In: IEEE Journal of Quantum Electronics, Vol. 47, No. 6, 5764939, 19.05.2011, p. 858-864.

Research output: Contribution to journalArticle

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