Avalanche multiplication and excess noise in InAs electron avalanche photodiodes at 77 K

Andrew Robert Julian Marshall, Peter Vines, Pin Jern Ker, John P.R. David, Chee Hing Tan

Research output: Contribution to journalArticle

30 Citations (Scopus)

Abstract

The findings of a study of impact ionization, avalanche multiplication and excess noise in InAs avalanche photodiodes at 77 K are reported. It is shown that hole impact ionization is negligible in practical devices which continue to operate as electron avalanche photodiodes, as they do at room temperature. A new electron ionization coefficient capable of modeling multiplication at 77 K is presented and it is shown that significant multiplication can be achieved in practical devices without excessive tunneling currents. The characteristic changes observed between room temperature and 77 K are discussed. This paper helps to demonstrate the potential for practical InAs electron avalanche photodiodes, operating cooled.

Original languageEnglish
Article number5764939
Pages (from-to)858-864
Number of pages7
JournalIEEE Journal of Quantum Electronics
Volume47
Issue number6
DOIs
Publication statusPublished - 19 May 2011

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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