Analyze of input process parameter variation on threshold voltage in 45nm n-channel MOSFET

F. Salehuddin, Ibrahim Ahmad, Fazrena Azlee Hamid, A. Zaharim, H. A. Elgomati, B. Y. Majlis

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Citations (Scopus)

Abstract

In this paper, Taguchi method was used to analyze of input process parameters variations on threshold voltage (V TH) in 45nm n-channel Metal Oxide Semiconductor device. The orthogonal array, the signal-to-noise ratio, and analysis of variance are employed to study the performance characteristics of a device. In this paper, there are eight process parameters (control factors) were varied for 2 and 3 levels to performed 18 experiments. Whereas, the two noise factors were varied for 2 levels to get four readings of VTH for every row of experiment. VTH results were used as the evaluation variable. This work was done using TCAD simulator, consisting of a process simulator, ATHENA and device simulator, ATLAS. These two simulators were combined with Taguchi method to aid in design and optimize the process parameters. In this research, S/D implant energy was identified as one of the process parameter that has the strongest effect on the response characteristics. While the halo implant dose was identified as an adjustment factor to get the nominal values of VTH for NMOS device equal to 0.289V at tox 1.06nm.

Original languageEnglish
Title of host publication2011 IEEE Regional Symposium on Micro and Nanoelectronics, RSM 2011 - Programme and Abstracts
Pages70-74
Number of pages5
DOIs
Publication statusPublished - 22 Dec 2011
Event2011 IEEE Regional Symposium on Micro and Nano Electronics, RSM 2011 - Kota Kinabalu, Sabah, Malaysia
Duration: 28 Sep 201130 Sep 2011

Publication series

Name2011 IEEE Regional Symposium on Micro and Nanoelectronics, RSM 2011 - Programme and Abstracts

Other

Other2011 IEEE Regional Symposium on Micro and Nano Electronics, RSM 2011
CountryMalaysia
CityKota Kinabalu, Sabah
Period28/09/1130/09/11

Fingerprint

Threshold voltage
Simulators
Taguchi methods
MOS devices
Analysis of variance (ANOVA)
Signal to noise ratio
Experiments

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Cite this

Salehuddin, F., Ahmad, I., Hamid, F. A., Zaharim, A., Elgomati, H. A., & Majlis, B. Y. (2011). Analyze of input process parameter variation on threshold voltage in 45nm n-channel MOSFET. In 2011 IEEE Regional Symposium on Micro and Nanoelectronics, RSM 2011 - Programme and Abstracts (pp. 70-74). [6088294] (2011 IEEE Regional Symposium on Micro and Nanoelectronics, RSM 2011 - Programme and Abstracts). https://doi.org/10.1109/RSM.2011.6088294
Salehuddin, F. ; Ahmad, Ibrahim ; Hamid, Fazrena Azlee ; Zaharim, A. ; Elgomati, H. A. ; Majlis, B. Y. / Analyze of input process parameter variation on threshold voltage in 45nm n-channel MOSFET. 2011 IEEE Regional Symposium on Micro and Nanoelectronics, RSM 2011 - Programme and Abstracts. 2011. pp. 70-74 (2011 IEEE Regional Symposium on Micro and Nanoelectronics, RSM 2011 - Programme and Abstracts).
@inproceedings{1a77a710a39e42b093d63085fce4987c,
title = "Analyze of input process parameter variation on threshold voltage in 45nm n-channel MOSFET",
abstract = "In this paper, Taguchi method was used to analyze of input process parameters variations on threshold voltage (V TH) in 45nm n-channel Metal Oxide Semiconductor device. The orthogonal array, the signal-to-noise ratio, and analysis of variance are employed to study the performance characteristics of a device. In this paper, there are eight process parameters (control factors) were varied for 2 and 3 levels to performed 18 experiments. Whereas, the two noise factors were varied for 2 levels to get four readings of VTH for every row of experiment. VTH results were used as the evaluation variable. This work was done using TCAD simulator, consisting of a process simulator, ATHENA and device simulator, ATLAS. These two simulators were combined with Taguchi method to aid in design and optimize the process parameters. In this research, S/D implant energy was identified as one of the process parameter that has the strongest effect on the response characteristics. While the halo implant dose was identified as an adjustment factor to get the nominal values of VTH for NMOS device equal to 0.289V at tox 1.06nm.",
author = "F. Salehuddin and Ibrahim Ahmad and Hamid, {Fazrena Azlee} and A. Zaharim and Elgomati, {H. A.} and Majlis, {B. Y.}",
year = "2011",
month = "12",
day = "22",
doi = "10.1109/RSM.2011.6088294",
language = "English",
isbn = "9781612848464",
series = "2011 IEEE Regional Symposium on Micro and Nanoelectronics, RSM 2011 - Programme and Abstracts",
pages = "70--74",
booktitle = "2011 IEEE Regional Symposium on Micro and Nanoelectronics, RSM 2011 - Programme and Abstracts",

}

Salehuddin, F, Ahmad, I, Hamid, FA, Zaharim, A, Elgomati, HA & Majlis, BY 2011, Analyze of input process parameter variation on threshold voltage in 45nm n-channel MOSFET. in 2011 IEEE Regional Symposium on Micro and Nanoelectronics, RSM 2011 - Programme and Abstracts., 6088294, 2011 IEEE Regional Symposium on Micro and Nanoelectronics, RSM 2011 - Programme and Abstracts, pp. 70-74, 2011 IEEE Regional Symposium on Micro and Nano Electronics, RSM 2011, Kota Kinabalu, Sabah, Malaysia, 28/09/11. https://doi.org/10.1109/RSM.2011.6088294

Analyze of input process parameter variation on threshold voltage in 45nm n-channel MOSFET. / Salehuddin, F.; Ahmad, Ibrahim; Hamid, Fazrena Azlee; Zaharim, A.; Elgomati, H. A.; Majlis, B. Y.

2011 IEEE Regional Symposium on Micro and Nanoelectronics, RSM 2011 - Programme and Abstracts. 2011. p. 70-74 6088294 (2011 IEEE Regional Symposium on Micro and Nanoelectronics, RSM 2011 - Programme and Abstracts).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

TY - GEN

T1 - Analyze of input process parameter variation on threshold voltage in 45nm n-channel MOSFET

AU - Salehuddin, F.

AU - Ahmad, Ibrahim

AU - Hamid, Fazrena Azlee

AU - Zaharim, A.

AU - Elgomati, H. A.

AU - Majlis, B. Y.

PY - 2011/12/22

Y1 - 2011/12/22

N2 - In this paper, Taguchi method was used to analyze of input process parameters variations on threshold voltage (V TH) in 45nm n-channel Metal Oxide Semiconductor device. The orthogonal array, the signal-to-noise ratio, and analysis of variance are employed to study the performance characteristics of a device. In this paper, there are eight process parameters (control factors) were varied for 2 and 3 levels to performed 18 experiments. Whereas, the two noise factors were varied for 2 levels to get four readings of VTH for every row of experiment. VTH results were used as the evaluation variable. This work was done using TCAD simulator, consisting of a process simulator, ATHENA and device simulator, ATLAS. These two simulators were combined with Taguchi method to aid in design and optimize the process parameters. In this research, S/D implant energy was identified as one of the process parameter that has the strongest effect on the response characteristics. While the halo implant dose was identified as an adjustment factor to get the nominal values of VTH for NMOS device equal to 0.289V at tox 1.06nm.

AB - In this paper, Taguchi method was used to analyze of input process parameters variations on threshold voltage (V TH) in 45nm n-channel Metal Oxide Semiconductor device. The orthogonal array, the signal-to-noise ratio, and analysis of variance are employed to study the performance characteristics of a device. In this paper, there are eight process parameters (control factors) were varied for 2 and 3 levels to performed 18 experiments. Whereas, the two noise factors were varied for 2 levels to get four readings of VTH for every row of experiment. VTH results were used as the evaluation variable. This work was done using TCAD simulator, consisting of a process simulator, ATHENA and device simulator, ATLAS. These two simulators were combined with Taguchi method to aid in design and optimize the process parameters. In this research, S/D implant energy was identified as one of the process parameter that has the strongest effect on the response characteristics. While the halo implant dose was identified as an adjustment factor to get the nominal values of VTH for NMOS device equal to 0.289V at tox 1.06nm.

UR - http://www.scopus.com/inward/record.url?scp=83755173896&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=83755173896&partnerID=8YFLogxK

U2 - 10.1109/RSM.2011.6088294

DO - 10.1109/RSM.2011.6088294

M3 - Conference contribution

SN - 9781612848464

T3 - 2011 IEEE Regional Symposium on Micro and Nanoelectronics, RSM 2011 - Programme and Abstracts

SP - 70

EP - 74

BT - 2011 IEEE Regional Symposium on Micro and Nanoelectronics, RSM 2011 - Programme and Abstracts

ER -

Salehuddin F, Ahmad I, Hamid FA, Zaharim A, Elgomati HA, Majlis BY. Analyze of input process parameter variation on threshold voltage in 45nm n-channel MOSFET. In 2011 IEEE Regional Symposium on Micro and Nanoelectronics, RSM 2011 - Programme and Abstracts. 2011. p. 70-74. 6088294. (2011 IEEE Regional Symposium on Micro and Nanoelectronics, RSM 2011 - Programme and Abstracts). https://doi.org/10.1109/RSM.2011.6088294