Analysis of threshold voltage variance in 45nm n-channel device using L27 orthogonal array method

F. Salehuddin, A. S. Mohd Zain, N. M. Idris, A. K. Mat Yamin, A. M. Abdul Hamid, Ibrahim Ahmad, P. S. Menon

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Citations (Scopus)

Abstract

In this research, orthogonal array of L27 in Taguchi Method was used to optimize the process parameters (control factors) variation in 45nm n-channel device with considering the interaction effect. The signal-to-noise (S/N) ratio and analysis of variance (ANOVA) are employed to study the performance characteristics of the device. There are only five process parameters (control factors) were varied for 3 levels to performed 27 experiments. Whereas, the two noise factors were varied for 2 levels to get four readings of Vth for every row of experiment. In this study, nominal-the-best characteristic was used in an effort to minimize the variance of Vth. The results show that the Vth values have least variance and percent different from the target value (0.287V) for this device is 1.42% (0.293V). This value is closer with International Technology Roadmap for Semiconductor (ITRS) prediction.

Original languageEnglish
Title of host publicationManufacturing Engineering
Pages297-302
Number of pages6
DOIs
Publication statusPublished - 17 Mar 2014
Event1st International Manufacturing Engineering Conference, iMEC 2013 - Gambang, Kuantan, Pahang, Malaysia
Duration: 01 Jul 201303 Jul 2013

Publication series

NameAdvanced Materials Research
Volume903
ISSN (Print)1022-6680

Other

Other1st International Manufacturing Engineering Conference, iMEC 2013
CountryMalaysia
CityGambang, Kuantan, Pahang
Period01/07/1303/07/13

Fingerprint

Threshold voltage
Taguchi methods
Analysis of variance (ANOVA)
Signal to noise ratio
Experiments
Semiconductor materials

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Salehuddin, F., Mohd Zain, A. S., Idris, N. M., Mat Yamin, A. K., Abdul Hamid, A. M., Ahmad, I., & Menon, P. S. (2014). Analysis of threshold voltage variance in 45nm n-channel device using L27 orthogonal array method. In Manufacturing Engineering (pp. 297-302). (Advanced Materials Research; Vol. 903). https://doi.org/10.4028/www.scientific.net/AMR.903.297
Salehuddin, F. ; Mohd Zain, A. S. ; Idris, N. M. ; Mat Yamin, A. K. ; Abdul Hamid, A. M. ; Ahmad, Ibrahim ; Menon, P. S. / Analysis of threshold voltage variance in 45nm n-channel device using L27 orthogonal array method. Manufacturing Engineering. 2014. pp. 297-302 (Advanced Materials Research).
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Salehuddin, F, Mohd Zain, AS, Idris, NM, Mat Yamin, AK, Abdul Hamid, AM, Ahmad, I & Menon, PS 2014, Analysis of threshold voltage variance in 45nm n-channel device using L27 orthogonal array method. in Manufacturing Engineering. Advanced Materials Research, vol. 903, pp. 297-302, 1st International Manufacturing Engineering Conference, iMEC 2013, Gambang, Kuantan, Pahang, Malaysia, 01/07/13. https://doi.org/10.4028/www.scientific.net/AMR.903.297

Analysis of threshold voltage variance in 45nm n-channel device using L27 orthogonal array method. / Salehuddin, F.; Mohd Zain, A. S.; Idris, N. M.; Mat Yamin, A. K.; Abdul Hamid, A. M.; Ahmad, Ibrahim; Menon, P. S.

Manufacturing Engineering. 2014. p. 297-302 (Advanced Materials Research; Vol. 903).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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Salehuddin F, Mohd Zain AS, Idris NM, Mat Yamin AK, Abdul Hamid AM, Ahmad I et al. Analysis of threshold voltage variance in 45nm n-channel device using L27 orthogonal array method. In Manufacturing Engineering. 2014. p. 297-302. (Advanced Materials Research). https://doi.org/10.4028/www.scientific.net/AMR.903.297