An alternative doping technique of polysilicon gate for sub-micron CMOS/BiCMOS devices

Abdullah Omar, Sharaifah Kamariah, Ibrahim Ahmad

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

This paper presents alternative techniques of polysilicon doping using POCl3 and ion implantation for gate electrode of sub-micron CMOS/BiCMOS devices during the technology transfer to local fab. The in-situ doping sheet resistance (Rs) value is use as a reference at range of 20 to 25 Ω/□. The polysilicon gate sheet resistance (Rs) obtain from both techniques were analyzed. The result shows that both techniques give the required polysilicon gate sheet resistance at 24 to 30 Ω/□ and close to the range of using in-situ doping technique. The Rs for both techniques can be improved further by increasing the POCl3 process temperature and higher the ion implantation dose rate. However, the ion implantation technique were recommended to be used at local fab because of it will eliminate the used of using high temperature treatment process as well as reducing the thermal effect to the device.

Original languageEnglish
Title of host publication2004 IEEE International Conference on Semiconductor Electronics, ICSE 2004
Pages388-392
Number of pages5
Publication statusPublished - 01 Dec 2004
Event2004 IEEE International Conference on Semiconductor Electronics, ICSE 2004 - Kuala Lumpur, Malaysia
Duration: 04 Dec 200409 Dec 2004

Publication series

NameProceedings ICSE 2004 - 2004 IEEE International Conference on Semiconductor Electronics

Other

Other2004 IEEE International Conference on Semiconductor Electronics, ICSE 2004
CountryMalaysia
CityKuala Lumpur
Period04/12/0409/12/04

Fingerprint

Sheet resistance
Polysilicon
Ion implantation
Doping (additives)
Technology transfer
Thermal effects
Temperature
Electrodes

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Cite this

Omar, A., Kamariah, S., & Ahmad, I. (2004). An alternative doping technique of polysilicon gate for sub-micron CMOS/BiCMOS devices. In 2004 IEEE International Conference on Semiconductor Electronics, ICSE 2004 (pp. 388-392). [1620911] (Proceedings ICSE 2004 - 2004 IEEE International Conference on Semiconductor Electronics).
Omar, Abdullah ; Kamariah, Sharaifah ; Ahmad, Ibrahim. / An alternative doping technique of polysilicon gate for sub-micron CMOS/BiCMOS devices. 2004 IEEE International Conference on Semiconductor Electronics, ICSE 2004. 2004. pp. 388-392 (Proceedings ICSE 2004 - 2004 IEEE International Conference on Semiconductor Electronics).
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abstract = "This paper presents alternative techniques of polysilicon doping using POCl3 and ion implantation for gate electrode of sub-micron CMOS/BiCMOS devices during the technology transfer to local fab. The in-situ doping sheet resistance (Rs) value is use as a reference at range of 20 to 25 Ω/□. The polysilicon gate sheet resistance (Rs) obtain from both techniques were analyzed. The result shows that both techniques give the required polysilicon gate sheet resistance at 24 to 30 Ω/□ and close to the range of using in-situ doping technique. The Rs for both techniques can be improved further by increasing the POCl3 process temperature and higher the ion implantation dose rate. However, the ion implantation technique were recommended to be used at local fab because of it will eliminate the used of using high temperature treatment process as well as reducing the thermal effect to the device.",
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Omar, A, Kamariah, S & Ahmad, I 2004, An alternative doping technique of polysilicon gate for sub-micron CMOS/BiCMOS devices. in 2004 IEEE International Conference on Semiconductor Electronics, ICSE 2004., 1620911, Proceedings ICSE 2004 - 2004 IEEE International Conference on Semiconductor Electronics, pp. 388-392, 2004 IEEE International Conference on Semiconductor Electronics, ICSE 2004, Kuala Lumpur, Malaysia, 04/12/04.

An alternative doping technique of polysilicon gate for sub-micron CMOS/BiCMOS devices. / Omar, Abdullah; Kamariah, Sharaifah; Ahmad, Ibrahim.

2004 IEEE International Conference on Semiconductor Electronics, ICSE 2004. 2004. p. 388-392 1620911 (Proceedings ICSE 2004 - 2004 IEEE International Conference on Semiconductor Electronics).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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N2 - This paper presents alternative techniques of polysilicon doping using POCl3 and ion implantation for gate electrode of sub-micron CMOS/BiCMOS devices during the technology transfer to local fab. The in-situ doping sheet resistance (Rs) value is use as a reference at range of 20 to 25 Ω/□. The polysilicon gate sheet resistance (Rs) obtain from both techniques were analyzed. The result shows that both techniques give the required polysilicon gate sheet resistance at 24 to 30 Ω/□ and close to the range of using in-situ doping technique. The Rs for both techniques can be improved further by increasing the POCl3 process temperature and higher the ion implantation dose rate. However, the ion implantation technique were recommended to be used at local fab because of it will eliminate the used of using high temperature treatment process as well as reducing the thermal effect to the device.

AB - This paper presents alternative techniques of polysilicon doping using POCl3 and ion implantation for gate electrode of sub-micron CMOS/BiCMOS devices during the technology transfer to local fab. The in-situ doping sheet resistance (Rs) value is use as a reference at range of 20 to 25 Ω/□. The polysilicon gate sheet resistance (Rs) obtain from both techniques were analyzed. The result shows that both techniques give the required polysilicon gate sheet resistance at 24 to 30 Ω/□ and close to the range of using in-situ doping technique. The Rs for both techniques can be improved further by increasing the POCl3 process temperature and higher the ion implantation dose rate. However, the ion implantation technique were recommended to be used at local fab because of it will eliminate the used of using high temperature treatment process as well as reducing the thermal effect to the device.

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Omar A, Kamariah S, Ahmad I. An alternative doping technique of polysilicon gate for sub-micron CMOS/BiCMOS devices. In 2004 IEEE International Conference on Semiconductor Electronics, ICSE 2004. 2004. p. 388-392. 1620911. (Proceedings ICSE 2004 - 2004 IEEE International Conference on Semiconductor Electronics).