Active-matrix GaN micro light-emitting diode display with unprecedented brightness

Johannes Herrnsdorf, Jonathan J.D. McKendry, Shuailong Zhang, Enyuan Xie, Ricardo Ferreira, David Massoubre, Ahmad Mahmood Zuhdi, Robert K. Henderson, Ian Underwood, Scott Watson, Anthony E. Kelly, Erdan Gu, Martin D. Dawson

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Abstract

Displays based on microsized gallium nitride light-emitting diodes possess extraordinary brightness. It is demonstrated here both theoretically and experimentally that the layout of the n-contact in these devices is important for the best device performance. We highlight, in particular, the significance of a nonthermal increase of differential resistance upon multipixel operation. These findings underpin the realization of a blue microdisplay with a luminance of 106 cd/m2.

Original languageEnglish
Article number7084141
Pages (from-to)1918-1925
Number of pages8
JournalIEEE Transactions on Electron Devices
Volume62
Issue number6
DOIs
Publication statusPublished - 01 Jun 2015

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All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Herrnsdorf, J., McKendry, J. J. D., Zhang, S., Xie, E., Ferreira, R., Massoubre, D., Zuhdi, A. M., Henderson, R. K., Underwood, I., Watson, S., Kelly, A. E., Gu, E., & Dawson, M. D. (2015). Active-matrix GaN micro light-emitting diode display with unprecedented brightness. IEEE Transactions on Electron Devices, 62(6), 1918-1925. [7084141]. https://doi.org/10.1109/TED.2015.2416915