• 663 Citations
  • 13 h-Index
19982020

Research output per year

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Research Output

2020

Enhanced performance of 19 single gate MOSFET with high permittivity dielectric material

Roslan, A. F., Salehuddin, F., Zain, A. S. M., Kaharudin, K. E. & Ahmad, I., 01 Jan 2020, In : Indonesian Journal of Electrical Engineering and Computer Science. 18, 2, p. 724-730 7 p.

Research output: Contribution to journalArticle

Open Access

Optimization of 16 nm DG-FinFET using L25 orthogonal array of Taguchi statistical method

Roslan, A. F., Salehuddin, F., Zain, A. S. M., Kaharudin, K. E. & Ahmad, I., 01 Jan 2020, In : Indonesian Journal of Electrical Engineering and Computer Science. 18, 3, p. 1207-1214 8 p.

Research output: Contribution to journalArticle

Open Access
2019

Comparative high-K material gate spacer impact in DG-finfet parameter variations between two structures

Roslan, A. F., Salehuddin, F., Zain, A. S. M., Kaharudin, K. E., Ahmad, I., Hazura, H., Hanim, A. R. & Idris, S. K., May 2019, In : Indonesian Journal of Electrical Engineering and Computer Science. 14, 2, p. 573-580 8 p.

Research output: Contribution to journalArticle

1 Citation (Scopus)
2018
1 Citation (Scopus)

Comparative Analysis of Process Parameter Variations in DGFinFET Device Using Statistical Methods

Roslan, A. F., Salehuddin, F., M Zain, A. S., Mansor, N., Kaharudin, K. E., Ahmad, I., Hazura, H., Hanim, A. R., Idris, S. K., Zaiton, A. M., Zarina, B. Z., Mohamad, N. R. & A Hamid, A. M., 30 Nov 2018, In : Journal of Physics: Conference Series. 1123, 1, 012048.

Research output: Contribution to journalConference article

High-k Dielectric Thickness and Halo Implant on Threshold Voltage Control

Mah, S. K., Ahmad, I., Ker, P. J. & Noor Faizah, Z. A., 01 Jan 2018, In : Journal of Telecommunication, Electronic and Computer Engineering. 10, 2-6, p. 1-5 5 p.

Research output: Contribution to journalArticle

Jsc and Voc optimization of perovskite solar cell with interface defect layer using taguchi method

Bahrudin, M. S., Abdullah, S. F., Ahmad, I., Mahmood Zuhdi, A. W., Hasani, A. H., Za'Abar, F., Malik, M. & Harif, M. N., 03 Oct 2018, 2018 IEEE International Conference on Semiconductor Electronics, ICSE 2018 - Proceedings. Institute of Electrical and Electronics Engineers Inc., p. 192-196 5 p. 8481203. (IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE; vol. 2018-August).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Modeling, simulation and optimization of 14nm high-K/metal gate NMOS with taguchi method

Mah, S. K., Ahmad, I., Ker, P. J., Tan, K. P. & Faizah, Z. A. N., 03 Oct 2018, 2018 IEEE International Conference on Semiconductor Electronics, ICSE 2018 - Proceedings. Institute of Electrical and Electronics Engineers Inc., p. 275-278 4 p. 8481293. (IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE; vol. 2018-August).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Optimization of 10nm Bi-GFET Device for higher ION/IOFF ratio using Taguchi Method

Roslan, A. F., Kaharudin, K. E., Salehuddin, F., Zain, A. S. M., Ahmad, I., Faizah, Z. A. N., Hazura, H., Hanim, A. R., Idris, S. K., Zaiton, A. M., Mohamad, N. R. & Hamid, A. M. A., 30 Nov 2018, In : Journal of Physics: Conference Series. 1123, 1, 012046.

Research output: Contribution to journalConference article

Optimization of process parameters for threshold voltage and leakage current based on taguchi method

Noor Faizah, Z. A., Ahmad, I., Ker, P. J., Menon, P. S., Afifah Maheran, A. H. & Mah, S. K., 01 Jan 2018, In : Journal of Telecommunication, Electronic and Computer Engineering. 10, 2-7, p. 143-146 4 p.

Research output: Contribution to journalArticle

Threshold voltage and leakage current variability on process parameter in a 22nm PMOS Device

Afifah Maheran, A. H., Menon, P. S., Ahmad, I., Noor Faizah, Z. A., Mohd Zain, A. S., Salehuddin, F. & Sayed, N. M., 01 Jan 2018, In : Journal of Telecommunication, Electronic and Computer Engineering. 10, 2-8, p. 9-13 5 p.

Research output: Contribution to journalArticle

1 Citation (Scopus)
2017

Control factors optimization on threshold voltage and leakage current in 22 nm NMOS transistor using Taguchi method

Afifah Maheran, A. H., Menon, P. S., Ahmad, I., Salehuddin, F., Mohd, A. S., Noor, Z. A. & Elgomati, H. A., 01 Jan 2017, In : Journal of Telecommunication, Electronic and Computer Engineering. 9, 2-7, p. 137-141 5 p.

Research output: Contribution to journalArticle

1 Citation (Scopus)

Growth kinetic and composition of the interfacial layer for RF sputtering Al2O3 layer on germanium

Sahari, S. K., Kashif, M., Sutan, N. M., Embong, Z., Nik Zaini Fathi, N. A. F., Hamzah, A. A., Sapawi, R., Majlis, B. Y. & Ahmad, I., 01 Jan 2017, In : Microelectronics International. 34, 2, p. 64-68 5 p.

Research output: Contribution to journalArticle

3 Citations (Scopus)

Performance characterization of schottky tunneling graphene field effect transistor at 60 nm gate length

Abidin, N. F. Z., Ahmad, I., Ker, P. J. & Menon, P. S., Jul 2017, In : Sains Malaysiana. 46, 7, p. 1089-1095 7 p.

Research output: Contribution to journalArticle

Vth and ILEAK Optimization using taguchi method at 32nm bilayer graphene PMOS

Noor Faizah, Z. A., Ahmad, I., Ker, P. J., Menon, P. S. & Afifah Maheran, A. H., 01 Jan 2017, In : Journal of Telecommunication, Electronic and Computer Engineering. 9, 2-7, p. 105-109 5 p.

Research output: Contribution to journalArticle

2 Citations (Scopus)
2016

Application of taguchi method with the interaction test for lower DIBL IN WSix/TiO2 channel vertical double gate NMOS

Kaharudin, K. E., Salehuddin, F., Zain, A. S. M., Aziz, M. N. I. A. & Ahmad, I., Jun 2016, In : ARPN Journal of Engineering and Applied Sciences. 11, 11, p. 7093-7103 11 p.

Research output: Contribution to journalArticle

2 Citations (Scopus)

Electrical characterization of different high-k dielectrics with tungsten silicide in vertical double gate nmos structure

Kaharudin, K. E., Salehuddin, F., Soin, N., Zain, A. S. M., Aziz, M. N. I. A. & Ahmad, I., 01 Jan 2016, In : ARPN Journal of Engineering and Applied Sciences. 11, 21, p. 12328-12335 8 p.

Research output: Contribution to journalArticle

4 Citations (Scopus)

Influence of Optimization of Process Parameters on Threshold Voltage for Development of HfO2/TiSi2 18 nm PMOS

Atan, N., Ahmad, I., Majlis, B. Y. & Azle, M. F., 07 Oct 2016, In : MATEC Web of Conferences. 78, 01019.

Research output: Contribution to journalConference article

1 Citation (Scopus)

Modeling and simulation of InAs photodiode on electric field profile and dark current characteristics

Roslan, P. S. A., Ker, P. J., Ahmad, I., Jagadeesh, P. & Fam, P. Z., 21 Sep 2016, 2016 IEEE International Conference on Semiconductor Electronics, ICSE 2016 - Proceedings. Institute of Electrical and Electronics Engineers Inc., p. 188-191 4 p. 7573623. (IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE; vol. 2016-September).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Modelling of 14NM gate length La2O3-based n-type MOSFET

Mah, S. K., Ahmad, I., Ker, P. J. & Noor Faizah, Z. A., 01 Jan 2016, In : Journal of Telecommunication, Electronic and Computer Engineering. 8, 4, p. 107-110 4 p.

Research output: Contribution to journalArticle

1 Citation (Scopus)

Optimization of process parameter variations on threshold voltage in Ultrathin Pillar Vertical Double Gate MOSFET Device

Kaharudin, K. E., Hamidon, A. H., Salehuddin, F., Ifwat Abd Aziz, M. N. & Ahmad, I., 01 Jan 2016, In : ARPN Journal of Engineering and Applied Sciences. 11, 6, p. 3838-3848 11 p.

Research output: Contribution to journalArticle

3 Citations (Scopus)

Process Characterization of 32nm Semi Analytical Bilayer Graphene-based MOSFET

Noor Faizah, Z. A., Ahmad, I., Ker, P. J. & Menon, P. S., 07 Oct 2016, In : MATEC Web of Conferences. 78, 01016.

Research output: Contribution to journalConference article

3 Citations (Scopus)

Process parameter optimisation for minimum leakage current in a 22nm p-type MOSFET using Taguchi method

Afifah Maheran, A. H., Menon, P. S., Ahmad, I., Salehuddin, F. & Mohd Zain, A. S., 01 Sep 2016, In : Journal of Telecommunication, Electronic and Computer Engineering. 8, 9, p. 19-23 5 p.

Research output: Contribution to journalArticle

4 Citations (Scopus)

Process Parameters Optimization of 14nm MOSFET Using 2-D Analytical Modelling

Noor Faizah, Z. A., Ahmad, I., Ker, P. J., Siti Munirah, Y., Mohd Firdaus, R., Md Fazle, E. & Menon, P. S., 07 Oct 2016, In : MATEC Web of Conferences. 78, 01017.

Research output: Contribution to journalConference article

1 Citation (Scopus)

Process parameters optimization of 14nm p-type MOSFET using 2-D analytical modeling

Noor Faizah, Z. A., Ahmad, I., Ker, P. J., Siti Munirah, Y., Mohd Firdaus, R., Mah, S. K. & Menon, P. S., 01 Jan 2016, In : Journal of Telecommunication, Electronic and Computer Engineering. 8, 4, p. 97-100 4 p.

Research output: Contribution to journalArticle

1 Citation (Scopus)

Statistical modelling of 14nm n-types MOSFET

Noor Faizah, Z. A., Ahmad, I., Ker, P. J., Siti Munirah, Y., Mohd Firdaus, R., Mah, S. K. & Menon, P. S., 01 Jan 2016, In : Journal of Telecommunication, Electronic and Computer Engineering. 8, 4, p. 91-95 5 p.

Research output: Contribution to journalArticle

2 Citations (Scopus)

Variability analysis of process parameters on subthreshold swing in vertical DG-MOSFET device

Kaharudin, K. E., Salehuddin, F., Hamidon, A. H., Zain, A. S. M., Abd Aziz, M. N. I. & Ahmad, I., 01 Mar 2016, In : ARPN Journal of Engineering and Applied Sciences. 11, 5, p. 3137-3142 6 p.

Research output: Contribution to journalArticle

4 Citations (Scopus)
2015

Determination of impact damage severity level in Sheet Molding Compound composite material using thermography method - A preliminary study

Mohamed, A. A., Disele, T. L., Ahmad, I. & Mohd, S., 29 Apr 2015, Advancing of Nuclear Science and Energy for National Development: Proceedings of the Nuclear Science, Technology, and Engineering Conference 2014, NuSTEC 2014. Hamzah, K., Idris, F. M., Hasan, A. B. & Mohamed, A. A. (eds.). American Institute of Physics Inc., 040008. (AIP Conference Proceedings; vol. 1659).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Development of process parameters for 22 nm PMOS using 2-D analytical modeling

Maheran, A. H. A., Menon, P. S., Ahmad, I., Shaari, S. & Faizah, Z. A. N., 24 Apr 2015, National Physics Conference 2014, PERFIK 2014. Yong, T-K., Phua, Y-N., Lin, H-S. & Rahman, F. A. (eds.). American Institute of Physics Inc., 030007. (AIP Conference Proceedings; vol. 1657).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Influence of process parameters on threshold voltage and leakage current in 18nm NMOS device

Atan, N., Ahmad, I., Majlis, B. B. Y. & Fauzi, I. B. A., 24 Apr 2015, National Physics Conference 2014, PERFIK 2014. Yong, T-K., Phua, Y-N., Lin, H-S. & Rahman, F. A. (eds.). American Institute of Physics Inc., 110002. (AIP Conference Proceedings; vol. 1657).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Modeling of 14 nm gate length n-Type MOSFET

Faizah, Z. A. N., Ahmad, I., Ker, P. J., Roslan, P. S. A. & Maheran, A. H. A., 11 Dec 2015, RSM 2015 - 2015 IEEE Regional Symposium on Micro and Nano Electronics, Proceedings. Institute of Electrical and Electronics Engineers Inc., 7354988. (RSM 2015 - 2015 IEEE Regional Symposium on Micro and Nano Electronics, Proceedings).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

8 Citations (Scopus)

Statistical optimization of process parameters for threshold voltage in 22 nm p-Type MOSFET using Taguchi method

Maheran, A. H. A., Menon, P. S., Shaari, S., Ahmad, I. & Faizah, Z. A. N., 11 Dec 2015, RSM 2015 - 2015 IEEE Regional Symposium on Micro and Nano Electronics, Proceedings. Institute of Electrical and Electronics Engineers Inc., 7354989. (RSM 2015 - 2015 IEEE Regional Symposium on Micro and Nano Electronics, Proceedings).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Taguchi modeling of process parameters in vdg-mosfet device for higher ION/IOFF ratio

Kaharudin, K. E., Salehuddin, F., Hamidon, A. H., Aziz, M. N. I. A. & Ahmad, I., 01 Jan 2015, In : Jurnal Teknologi. 77, 21, p. 19-26 8 p.

Research output: Contribution to journalArticle

2 Citations (Scopus)
2014

Analysis of threshold voltage variance in 45nm n-channel device using L27 orthogonal array method

Salehuddin, F., Mohd Zain, A. S., Idris, N. M., Mat Yamin, A. K., Abdul Hamid, A. M., Ahmad, I. & Menon, P. S., 2014, Manufacturing Engineering. p. 297-302 6 p. (Advanced Materials Research; vol. 903).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

9 Citations (Scopus)

Application of Taguchi method in designing a 22nm high-k/metal gate NMOS transistor

Afifah Maheran, A. H., Menon, P. S., Ahmad, I. & Shaari, S., 01 Jan 2014, Micro/Nano Science and Engineering. Trans Tech Publications, p. 514-518 5 p. (Advanced Materials Research; vol. 925).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Effect of Halo structure variations on the threshold voltage of a 22 nm gate length NMOS transistor

Afifah Maheran, A. H., Menon, P. S., Ahmad, I. & Shaari, S., 01 Jan 2014, In : Materials Science in Semiconductor Processing. 17, p. 155-161 7 p.

Research output: Contribution to journalArticle

16 Citations (Scopus)

Effect of process parameter variability on the threshold voltage of downscaled 22nm PMOS using taguchi method

Maheran, A. H. A., Menon, P. S., Shaari, S., Kalaivani, T., Ahmad, I., Faizah, Z. A. N. & Apte, P. R., 10 Oct 2014, IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE. Institute of Electrical and Electronics Engineers Inc., p. 178-181 4 p. 6920825

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Effects of high-K dielectrics with metal gate for electrical characteristics of 18nm NMOS device

Atan, N., Ahmad, I. & Majlis, B. B. Y., 10 Oct 2014, IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE. Institute of Electrical and Electronics Engineers Inc., p. 56-59 4 p. 6920794

Research output: Chapter in Book/Report/Conference proceedingConference contribution

13 Citations (Scopus)

Optimisation of process parameters for lower leakage current in 22 nm n-type MOSFET device using Taguchi method

Afifah Maheran, A. H., Menon, P. S., Ahmad, I. & Shaari, S., 01 Jan 2014, In : Jurnal Teknologi (Sciences and Engineering). 68, 4, p. 1-5 5 p.

Research output: Contribution to journalConference article

11 Citations (Scopus)

Optimisation of process parameters for lower leakage current in 22 nm n-type MOSFET device using Taguchi method

Afifah Maheran, A. H., Menon, P. S., Ahmad, I. & Shaari, S., 01 Jan 2014, In : Jurnal Teknologi (Sciences and Engineering). 68, 4, p. 45-49 5 p.

Research output: Contribution to journalConference article

7 Citations (Scopus)

Reflow soldering process for Sn3.5Ag solder on ENIG using rapid thermal processing system

Adhila Muhammad, N., Bais, B. & Ahmad, I., Jan 2014, In : Sains Malaysiana. 43, 1, p. 117-122 6 p.

Research output: Contribution to journalArticle

1 Citation (Scopus)

Statistical process modelling for 32nm high-K/metal gate PMOS device

Maheran, A. H. A., Noor Faizah, Z. A., Menon, P. S., Ahmad, I., Apte, P. R., Kalaivani, T. & Salehuddin, F., 10 Oct 2014, IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE. Institute of Electrical and Electronics Engineers Inc., p. 232-235 4 p. 6920839. (IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

7 Citations (Scopus)

Study of the effect of WO3 and Bi2O3 on the microstructure and electrical properties of a TiO2 based varistor

Kothandapani, Z., Begum, S., Ahmad, I., Daud, I. R. & Gholizadeh, S., Jun 2014, In : Journal of Mechanical Engineering and Sciences. 6, p. 981-987 7 p.

Research output: Contribution to journalArticle

Taguchi optimization of a SiGe/Si quantum dot SOI-based lateral PIN photodiode

Menon, P. S., Tasirin, S. K., Ahmad, I. & Abdullah, S. F., 01 Jan 2014, Micro/Nano Science and Engineering. Trans Tech Publications, p. 646-650 5 p. (Advanced Materials Research; vol. 925).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Wide wavelength range and high speed SiGe/Si multi quantum-well silicon-on-insulator-based lateral PIN photodiode

Menon, P. S., Tasirin, S. K., Ahmad, I. & Abdullah, S. F., 01 Aug 2014, In : Journal of Nanoelectronics and Optoelectronics. 9, 4, p. 507-510 4 p.

Research output: Contribution to journalArticle

2 Citations (Scopus)
2013

4th International Conference on Energy and Environment 2013 (ICEE 2013)

Chakrabarty, C. K., Bin Shamsuddin, A. H., Bin Ahmad, I., Bin Mohamed Desa, M. N., Bte Md Din, N., Bte Mohd, L., Hamid, N. A., See, O. H., Nagi, F. H., Yong, L. C., Pasupuleti, J., Mei, G. S., Bin Abdullah, F. & Satgunam, M., 01 Jan 2013, In : IOP Conference Series: Earth and Environmental Science. 16, 1, 011001.

Research output: Contribution to journalEditorial

Design and optimization of 22 nm gate length high-k/metal gate NMOS transistor

Afifah Maheran, A. H., Menon, P. S., Ahmad, I., Shaari, S., Elgomati, H. A. & Salehuddin, F., 01 Jan 2013, In : Journal of Physics: Conference Series. 431, 1, 012026.

Research output: Contribution to journalConference article

21 Citations (Scopus)

High performance silicon lateral PIN photodiode

Tasirin, S. K., Menon, P. S., Ahmad, I. & Abdullah, S. F., 01 Jan 2013, In : IOP Conference Series: Earth and Environmental Science. 16, 1, 012032.

Research output: Contribution to journalConference article

2 Citations (Scopus)

Optimization of process parameters for Si lateral PIN photodiode

Menon, P. S., Kalthom Tasirin, S., Ahmad, I. & Abdullah, S. F., 25 Jun 2013, In : World Applied Sciences Journal. 21, SPECIAL ISSUE1, p. 98-103 6 p.

Research output: Contribution to journalArticle

3 Citations (Scopus)