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Personal profile

Personal profile


Fingerprint Dive into the research topics where Ibrahim Ahmad is active. These topic labels come from the works of this person. Together they form a unique fingerprint.

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Taguchi methods Engineering & Materials Science
Threshold voltage Engineering & Materials Science
Soldering alloys Engineering & Materials Science
Fabrication Engineering & Materials Science
Transistors Engineering & Materials Science
MOSFET devices Engineering & Materials Science
Leakage currents Engineering & Materials Science
Simulators Engineering & Materials Science

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Research Output 1998 2019

Comparative high-K material gate spacer impact in DG-finfet parameter variations between two structures

Roslan, A. F., Salehuddin, F., Zain, A. S. M., Kaharudin, K. E., Ahmad, I., Hazura, H., Hanim, A. R. & Idris, S. K., 01 May 2019, In : Indonesian Journal of Electrical Engineering and Computer Science. 14, 2, p. 573-580 8 p.

Research output: Contribution to journalArticle

Leakage Current
Leakage currents
Semiconductor materials
Threshold voltage
Noise Factor
Taguchi Method
Taguchi methods
Threshold voltage

Comparative Analysis of Process Parameter Variations in DGFinFET Device Using Statistical Methods

Roslan, A. F., Salehuddin, F., M Zain, A. S., Mansor, N., Kaharudin, K. E., Ahmad, I., Hazura, H., Hanim, A. R., Idris, S. K., Zaiton, A. M., Zarina, B. Z., Mohamad, N. R. & A Hamid, A. M., 30 Nov 2018, In : Journal of Physics: Conference Series. 1123, 1, 012048.

Research output: Contribution to journalConference article

factorial design
threshold voltage
Taguchi methods

High-k Dielectric Thickness and Halo Implant on Threshold Voltage Control

Mah, S. K., Ahmad, I., Ker, P. J. & Noor Faizah, Z. A., 01 Jan 2018, In : Journal of Telecommunication, Electronic and Computer Engineering. 10, 2-6, p. 1-5 5 p.

Research output: Contribution to journalArticle

Gate dielectrics
Threshold voltage
Voltage control
MOSFET devices